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PSMN7R8-120ES Datasheet

MOSFET

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PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
18 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
I2PAK package for slimline adaptors & height constrained applications
3. Applications
AC-to-DC power supply
Synchronous rectification
Motor control
Slimline adaptors & chargers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
Min Typ Max Unit
- - 120 V
- - 70 A
- - 349 W
4.7 6.72 7.9 mΩ
- 50.5 - nC
- 167 - nC
- - 386 mJ
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NXP Semiconductors Electronic Components Datasheet

PSMN7R8-120ES Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 D drain
3 S source
mb D
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
I2PAK (SOT226)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN7R8-120ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
7. Marking
Table 4. Marking codes
Type number
PSMN7R8-120ES
Marking code
PSMN7R8-120ES
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
PSMN7R8-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2013
Version
SOT226
Min Max Unit
- 120 V
- 120 V
-20 20
V
- 70 A
- 70 A
- 280 A
- 349 W
-55 175 °C
© NXP B.V. 2013. All rights reserved
2 / 13


Part Number PSMN7R8-120ES
Description MOSFET
Maker NXP Semiconductors
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