900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PSMN7R8-120PS Datasheet

MOSFET

No Preview Available !

PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
25 January 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
TO220 package
Suitable for standard level gate drive
3. Applications
AC-to-DC power supply
Synchronous rectification
Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
Min Typ Max Unit
- - 120 V
- - 70 A
- - 349 W
4.7 6.72 7.9 mΩ
- 50.5 - nC
- 167 - nC
- - 386 mJ
Scan or click this QR code to view the latest information for this product


NXP Semiconductors Electronic Components Datasheet

PSMN7R8-120PS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 D drain
3 S source
mb D
drain
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN7R8-120PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN7R8-120PS
Marking code
PSMN7R8-120PS
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
PSMN7R8-120PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 January 2013
Min Max Unit
- 120 V
- 120 V
-20 20
V
- 70 A
- 70 A
- 280 A
© NXP B.V. 2013. All rights reserved
2 / 13


Part Number PSMN7R8-120PS
Description MOSFET
Maker NXP Semiconductors
PDF Download

PSMN7R8-120PS Datasheet PDF





Similar Datasheet

1 PSMN7R8-120PS MOSFET
NXP Semiconductors
2 PSMN7R8-120PS N-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy