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PSMN8R3-40YS - N-channel MOSFET

General Description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency gains in switching power converters.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 1.3.

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Datasheet Details

Part number PSMN8R3-40YS
Manufacturer NXP Semiconductors
File Size 281.15 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN8R3-40YS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr PSMN8R3-40YS N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC convertors „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1.