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RB521CS30L Datasheet

100 mA low VF MEGA Schottky barrier rectifier

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RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
Rev. 1 — 24 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Average forward current: IF(AV) 100 mA
„ Reverse voltage: VR 30 V
„ Low forward voltage: VF 350 mV
„ Low reverse current: IR 10 μA
„ AEC-Q101 qualified
„ Leadless ultra small SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
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Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
average forward current
IR reverse current
VR reverse voltage
VF forward voltage
Conditions
square wave;
δ = 0.5; f = 20 kHz
Tamb 135 °C
Tsp 145 °C
VR = 10 V
IF = 10 mA
Min Typ Max Unit
[1] - - 100 mA
- - 100 mA
- 2 10 μA
- - 30 V
[2] - 280 350 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.


NXP Semiconductors Electronic Components Datasheet

RB521CS30L Datasheet

100 mA low VF MEGA Schottky barrier rectifier

No Preview Available !

NXP Semiconductors
RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
Transparent
top view
Graphic symbol
12
sym001
Table 3. Ordering information
Type number
Package
Name
Description
RB521CS30L
-
leadless ultra small plastic package; 2 terminal;
body 1.0 × 0.6 × 0.5 mm
Version
SOD882
4. Marking
Table 4. Marking codes
Type number
RB521CS30L
Marking code
AR
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
IF(AV)
reverse voltage
average forward current
square wave; δ = 0.5;
f = 20 kHz
-
Tamb 135 °C
Tsp 145 °C
IFSM non-repetitive peak forward half sine wave;
current
tp 8.3 ms
[1] -
-
[2] -
Max Unit
30 V
100 mA
100 mA
3A
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RB521CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 January 2011
© NXP B.V. 2011. All rights reserved.
2 of 13


Part Number RB521CS30L
Description 100 mA low VF MEGA Schottky barrier rectifier
Maker NXP Semiconductors
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