Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
25NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 25 39 600 1.4
Units A A A
1
M1 PAC.
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25NDD. For precise diagrams, tables, and layout, please refer to the original PDF.
www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at h...
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oved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 25NDD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 25 39 600 1.4 Units A A A 1 M1 PACKAGE kA s 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth