Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
25NTD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 25 50 450 1150
Units A A A As
2
M1.
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25NTD. For precise diagrams, tables, and layout, please refer to the original PDF.
www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability ...
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Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 25NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 25 50 450 1150 Units A A A As 2 M1 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rt
25NTD Datasheet
