Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
25NTT
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 25 50 450 1150
Units A A A As
M1 PAC.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
25NTT. For precise diagrams, tables, and layout, please refer to the original PDF.
www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stabil...
View more extracted text
• • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 25NTT Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 25 50 450 1150 Units A A A As M1 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol T
25NTT Datasheet
