MBR20030CTR - (MBR20020CT - MBR20040CTR) Schottky Power Diode
Naina Semiconductor
Download the MBR20030CTR datasheet PDF.
This datasheet also covers the MBR20020CT variant, as both devices belong to the same (mbr20020ct - mbr20040ctr) schottky power diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR20020CT thru MBR20040CTR
Silicon Schottky Diode, 200A
TWIN TOWER.
Note: The manufacturer provides a single datasheet file (MBR20020CT_NainaSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MBR20030CTR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBR20030CTR. For precise diagrams, and layout, please refer to the original PDF.
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon...
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current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM 1500 http://www.DataSheet4U.