MBR30045CT
Features
- -
- - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thru MBR300100CTR
Silicon Schottky Diode, 300A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 o C TC = 25 o C tp = 8.3 ms Conditions MBR30045CT (R) 45 32 45 300 MBR30060CT MBR30080CT (R) (R) 60 42 60 300 80 56 80 300 MBR300100C T(R) 100 70 100 300 Units V V V A
IFSM
2500 http://..net/
Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 150 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR30045CT (R) 0.68 8 200 MBR30060CT (R) 0.76 8 200 MBR30080CT (R) 0.88 8 200 MBR300100C T(R) 0.88 8 m A 200 Units V
DC reverse current
Thermal Characteristics...
