Datasheet Summary
Naina Semiconductor Ltd.
MUR20040CT thru MUR20060CTR
Features
Super Fast Recovery Diode, 200A
- Dual Diode Construction
- Low Leakage Current
- Low forward voltage drop
- High surge current capability
- Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
Average forward current
IF(AV)
Non-repetitive forward surge current, half sinewave
IFSM
Conditions
TC ≤ 140 oC TC = 25 oC
MUR20040CT(R) 400 280 400 200
MUR20060CT(R) 600 420 600 200
Units V V V A
Electrical Characteristics (TJ = 25oC unless otherwise...
