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N01L163WC2A - Ultra-Low Power Asynchronous CMOS SRAM

Description

Pin Name A0-A15 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected (DOC# 14-02-010 REV F ECN# 01-0996) The specifications of t

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access.

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Datasheet Details

Part number N01L163WC2A
Manufacturer NanoAmp Solutions
File Size 295.91 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N01L163WC2A Datasheet
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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L163WC2A www.DataSheet4U.com 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L163WC2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device.
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