N08L163WC1C Datasheet 8Mb Ultra-Low Power Asynchronous CMOS SRAM

Manufacturer: NanoAmp Solutions

N08L163WC1C 8mb ultra-low power asynchronous cmos sram by NanoAmp Solutions - Datasheet Preview

Datasheet Details

Part number	N08L163WC1C
Manufacturer	NanoAmp Solutions
File Size	250.09 KB
Description	8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N08L163WC1C Datasheet

Overview

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC1C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.

Key Features

Single Wide Power Supply Range 2.2 to 3.6 Volts.
Very low standby current 2.0µA at 3.0V (Typical).
Very low operating current 1.5mA at 3.0V and 1µs(Typical).
Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.5V.
Very fast output enable access time 25ns OE access time.
Automatic power down to standby mode.
TTL compatible three-state o.

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