N08L163WC2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions

N08L163WC2A Datasheet Preview — Preview of N08L163WC2A PDF

Datasheet Details

Part number	N08L163WC2A
Manufacturer	NanoAmp Solutions
File Size	278.95 KB
Description	8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N08L163WC2A_NanoAmpSolutions.pdf

N08L163WC2A Product details

Description

4 A1 A4 A6 A7 A16 A15 A13 A10 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected I/O14 I/O13 I/O15 A18 NC A8 48 Pin BGA (top) 8 x 10 mm (DOC# 14-02-020 REV F ECN# 01-1281) Th

Features

Single Wide Power Supply Range 2.3 to 3.6 Volts.
Very low standby current 4.0µA at 3.0V (Typical).
Very low operating current 2.0mA at 3.0V and 1µs(Typical).
Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical).
Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.8V.
Very fast output enable access.

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