N16T1630C2B - 16Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions

Datasheet Details

Part number	N16T1630C2B
Manufacturer	NanoAmp Solutions
File Size	275.89 KB
Description	16Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N16T1630C2B Datasheet

General Description

Pin Name A0-A19 WE

Overview

www.DataSheet4U.com NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2B 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1M x 16 bit Overview The N16T1630C2B is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits.

It is designed to be identical in operation and interface to standard 6T SRAMS.

Key Features

Single Wide Power Supply Range 2.7 to 3.6 Volts.
Very low standby current 100µA at 3.0V (Max).
Very low operating current 2.0mA at 3.0V and 1µs (Typical).
Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Very fast access time 55ns address access option 35ns OE access time.
Automatic power down to standby mode.
TTL compatible three-state output.

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