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N16T1630C2B Datasheet Preview

N16T1630C2B Datasheet

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N16T1630C2B
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit
Overview
Features
The N16T1630C2B is an integrated memory
device containing a low power 16 Mbit SRAM built
using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16T1630C2B is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard BGA packages
compatible with other standard 1Mb x 16 SRAMs.
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
100µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
35ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green option for BGA package
Product Family
Part Number
Package
Type
Operating
Temperature
N16T1630C2BZ
48 - BGA
N16T1630C2BZ2 Green 48 - BGA
-40oC to +85oC
Pin Configuration (Top View)
Power
Supply (Vcc)
2.7V - 3.6V
Speed
70ns
55ns
Standby
Operating
Current (ISB), Current (Icc),
Max @ 3.0V
Max
100 µA
3 mA @ 1MHz
Pin Description
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Ball BGA
6 x 8 mm
Pin Name
A0-A19
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1




NanoAmp Solutions

N16T1630C2B Datasheet Preview

N16T1630C2B Datasheet

16Mb Ultra-Low Power Asynchronous CMOS SRAM

No Preview Available !

www.DataSheet4U.com
NanoAmp Solutions, Inc.
Functional Block Diagram
N16T1630C2B
Address
Inputs
A0 - A19
Address
Decode
Logic
CE1
CE2
WE Control
OE Logic
UB
LB
1M
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
L HX XHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby
Write
Read
Active
Standby
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2


Part Number N16T1630C2B
Description 16Mb Ultra-Low Power Asynchronous CMOS SRAM
Maker NanoAmp Solutions
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