Overview: NanoAmp Solutions, Inc. 670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N64T1630C1B
Advance Information 64Mb Ultra-Low Power Asynchronous CMOS PSRAM
4M × 16 Bits Overview
The N64T1630C1B is an integrated memory device containing a 64 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4,194,304 words by 16 bits. It is designed to be patible in operation and .. interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device includes a ZZ input for deep sleep as well as several other power saving modes: Partial Array Self Refresh mode where data is retained in a portion of the array and Temperature pensated Refresh. Both these modes reduce standby current drain. The N64T1630C1B can be operated in a standard asynchronous mode and data can also be read in a 4-word page mode for fast access times. The die has separate power rails, VccQ and VssQ for the I/O to be run from a separate power supply from the device core.
