RoHS compliant. 2,4
Package Dimensions
TO-252
1
3
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic b.
Full PDF Text Transcription for Si6040 (Reference)
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Si6040. For precise diagrams, and layout, please refer to the original PDF.
Si6040 N-Channel Enhancement MOSFET Si6040 Features ·Low On resistance. ·4.5V drive. ·RoHS compliant. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ra...
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. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.
Si6040 Datasheet
