M2S4G64CB8HB5N
Features
- Performance: Speed Sort DIMM CAS Latency fck
- Clock Frequency tck
- Clock Cycle f DQ
- DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps
- Programmable Operation:
- DIMM Latency: 5, 6, 7, 8/PC3-8500; 5, 6, 7, 8, 9/PC3-10600; 5, 6, 7, 8, 9, 10, 11/PC3-12800
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
- Two different termination values (Rtt_Nom & Rtt_WR)
- 14/10/1 (row/column/rank) Addressing for 1GB
- 15/10/1 (row/column/rank) Addressing for 2GB
- 15/10/2 (row/column/rank) Addressing for 4GB
- Extended operating temperature rage
- Auto Self-Refresh option
- Serial Presence Detect
- Gold contacts
- 1GB: SDRAMs are in 96-ball BGA Package
- 2GB: SDRAMs are in 78-ball BGA Package
- 4GB: SDRAMs are in 78-ball BGA Package
- Ro HS pliance and Halogen free Unit
- 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
- 1GB: 128Mx64 Unbuffered DDR3...
