NT5CC64M16FP
Description
The 1Gb Double-Data-Rate-3 (DDR3(L)) F-die DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM.
Key Features
- JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM
- Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes
- Power Saving Mode - Partial Array Self Refresh (PASR)1 - Power Down Mode
- Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)
- Signal Synchronization - Write Leveling via MR settings 7 - Read Leveling via MPR
- Interface and Power Supply - SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V) - SSTL_1354 for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)
- Speed Grade (CL-TRCD-TRP) 2,3 - 2133 Mbps / 14-14-14 - 1866 Mbps / 13-13-13 - 1600 Mbps / 10-10-10,11-11-11 Options
- Temperature Range (Tc) 5 - Commercial Grade = 0℃~95℃ - Industrial Grade (-I) = -40℃~95℃ - Automotive Grade 2 (-H) = -40℃~105℃ - Automotive Grade 3 (-A) = -40℃~95℃ Programmable Functions
- CAS Latency (5/6/7/8/9/10/11/12/13/14)
- CAS Write Latency (5/6/7/8/9/10)
