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NT5TU128M8HE - Industrial and Automotive DDR2 1Gb SDRAM

Description

Symbol Type CK, CK Input CKE Input CS Input RAS, CAS,WE Input DM (LDM, UDM) Input BA0 BA2 Input A0

Clock: CK and CK are differential clock inputs.

Features

  • JEDEC DDR2 Compliant - Double-data rate on DQs, DQS, DM bus - 4n Prefetch Architecture.
  • Throughput of valid Commands - Posted CAS and Additive Latency (AL).
  • Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination.
  • Data Integrity - Auto Refresh and Self Refresh Modes.
  • Power Saving Modes - Power Down Mode - Partial Array Self Refresh (PASR).
  • SSTL_18 compliance and Power Supply - VDD/VDDQ = 1.70 to 1.90V Options.
  • Speed Gr.

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Datasheet Details

Part number NT5TU128M8HE
Manufacturer Nanya
File Size 3.81 MB
Description Industrial and Automotive DDR2 1Gb SDRAM
Datasheet download datasheet NT5TU128M8HE Datasheet
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D1GDbR2D1DGRb2 SDRAM H-Die NT5TU128M8HE / NT5TU64M16HG(Z) Nanya Technology Corp. NT5TU128M8HE / NT5TU64M16HG(Z) Commercial, Industrial and Automotive DDR2 1Gb SDRAM Features  JEDEC DDR2 Compliant - Double-data rate on DQs, DQS, DM bus - 4n Prefetch Architecture  Throughput of valid Commands - Posted CAS and Additive Latency (AL)  Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination  Data Integrity - Auto Refresh and Self Refresh Modes  Power Saving Modes - Power Down Mode - Partial Array Self Refresh (PASR)  SSTL_18 compliance and Power Supply - VDD/VDDQ = 1.70 to 1.
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