Description
NT2GC72B89B0NJ, NT2GC72B89B2NJ, NT2GC72C89B0NJ, NT2GC72C89B2NJ, NT4GC72B4PB0NL, NT4GC72C4PB0NL, NT4GC72C4PB2NL, NT4GC72B8PB0NL ,NT4GC72C8PB0NL , NT4GC72C8PB2NL, NT8GC72B4NB1NJ, NT8GC72B4NB3NJ ,NT8GC72C4NB1NJ, NT8GC72C4NB3NJ, NT16TC72B4NB1NL, NT16TC72C4NB1NL and NT16TC72C4NB3NL are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Registered Dual In-Line Memory Module, organized as one rank of 256Mx72 (2GB), one rank or two ranks of 512Mx72 (4GB), two ranks of 1Gx72 (8GB) and four ranks of 2Gx72 (16GB) high-speed memory array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices, eighteen 256Mx8 (4GB) 78-ball BGA packaged devices, thirty-six 512Mx4 (8GB) 78-ball BGA packaged devices and thirty-six 1Gx4 (DDP) (16GB) 78-ball BGA packaged devices.
Key Features
- Programmable Operation
- DIMM Latency: 6,7,8,9 - Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8 - Operation: Burst Read and Write
- Two different termination values (Rtt_Nom & Rtt_WR)
- 15/10/1 (row/column/rank) Addressing for 2GB
- 15/11/2 (row/column/rank) Addressing for 8GB
- 15/11/4 (row/column/rank) Addressing for 16GB
- Extended operating temperature rage
- Auto Self-Refresh option
- Serial Presence Detect
