| Description | The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/\ = 85°C (Derate 2.56 mW/°C) -50V 50 mA 250 mW Total Device Dissipation, Ta = 85°C (Derate 4.3 mW/°C) 500 mW Stora... |
| Features |
V DG - 20V, Dl - 200 jiA
iDSS
9fs gfs gos gos C, ss
C rss
NF
Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverss Transfer Capacitance
V DS = 20V, V G S = 0, (Note 1) V D S' 20...
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| Datasheet |
 2N5196 Datasheet 32.76KB |
