Datasheet4U Logo Datasheet4U.com

2N5198 - N-Channel Monolithic Dual JFETs

This page provides the datasheet information for the 2N5198, a member of the 2N5196 N-Channel Monolithic Dual JFETs family.

Description

match.

(Derate 2.

📥 Download Datasheet

Datasheet preview – 2N5198

📁 Similar Datasheet

  • 2N5198 - Monolithic N-Channel JFET (Vishay Siliconix)
  • 2N5198 - Monolithic N-Channel JFET (TEMIC)
  • 2N5198 - N-Channel Dual Silicon Junction Field-Effect Transistor (InterFET)
  • 2N5190 - NPN SILICON POWER TRANSISTOR (Central Semiconductor Corp)
  • 2N5190 - Silicon NPN Power Transistors (ON Semiconductor)
  • 2N5190 - (2N5190 - 2N5192) Silicon NPN Power Transistors (SavantIC)
  • 2N5190G - Silicon NPN Power Transistors (ON Semiconductor)
  • 2N5190R - NPN SILICON POWER TRANSISTOR (Central Semiconductor)
  • 2N5191 - POWER TRANSISTORS (ON Semiconductor)
  • 2N5191 - NPN power transistors (STMicroelectronics)
Other Datasheets by National Semiconductor
  • 2N5196 - N-Channel Monolithic Dual JFETs
  • 2N5197 - N-Channel Monolithic Dual JFETs
  • 2N5199 - N-Channel Monolithic Dual JFETs
  • 2N5245 - N-Channel JFETs
  • 2N5246 - N-Channel JFETs
  • 2N5247 - N-Channel JFETs
  • 2N5358 - N-Channel JFETs
  • 2N5359 - N-Channel JFETs

Full PDF Text Transcription

Click to expand full text
Process 83 2N51 96-99 N-Channel Monolithic Dual JFETs General Description The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/ = 85°C (Derate 2.56 mW/°C) -50V 50 mA 250 mW Total Device Dissipation, Ta = 85°C (Derate 4.3 mW/°C) 500 mW Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 65°Cto+200°C a 300 C 0175- 0195 " (4445 -4.9531 0.209 0.230 (5.309 SM2! 0170-0.210 (4.318 5T334) SLATIMG PLANE mnr 016 -0 019 ddq] 0.030 PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 0.028-0.
Published: |