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2N5430 - MEDIUM POWER NPN SILICON TRANSISTOR (Seme LAB)
LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N5430 MEDIUM POWER NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3..

2N5431 - PN UNIJUNCTION TRANSISTOR (Motorola)
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2N5432 - N-Channel JFETs (Vishay Siliconix)
2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N5432 2N5433 2N5434 VGS(off) (V) –4 to –10 –3 to –9 –1 to –4 rDS(on.

2N5433 - N-Channel JFETs (Vishay Siliconix)
2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N5432 2N5433 2N5434 VGS(off) (V) –4 to –10 –3 to –9 –1 to –4 rDS(on.

2N5435 - PNP germanium power switching transistors (ETC)
2N5435 (GERMANIUM) thru 2N5440 PNP germanium power switching transistors designed for high-current, fast-switching applications requiring low satura.

2N5436 - PNP germanium power switching transistors (ETC)
2N5435 (GERMANIUM) thru 2N5440 PNP germanium power switching transistors designed for high-current, fast-switching applications requiring low satura.

2N5437 - PNP germanium power switching transistors (ETC)
2N5435 (GERMANIUM) thru 2N5440 PNP germanium power switching transistors designed for high-current, fast-switching applications requiring low satura.

2N5438 - PNP germanium power switching transistors (ETC)
2N5435 (GERMANIUM) thru 2N5440 PNP germanium power switching transistors designed for high-current, fast-switching applications requiring low satura.

2N5439 - PNP germanium power switching transistors (ETC)
2N5435 (GERMANIUM) thru 2N5440 PNP germanium power switching transistors designed for high-current, fast-switching applications requiring low satura.

2N5400 - Amplifier Transistor (ON Semiconductor)
2N5400 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Volt.