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2N6484 - N-Channel Monolithic Dual JFET

Download the 2N6484 datasheet PDF. This datasheet also covers the 2N6483 variant, as both devices belong to the same n-channel monolithic dual jfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The 2N6483 thru 2N6485 series of N-channel monolithic dual JFETs is designed for low to medium frequency low noise differential amplifier applications requiring tight match and high common-mode rejection.

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Note: The manufacturer provides a single datasheet file (2N6483-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N6484 Low Noise Dual N-Channel JFET Intersil
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2N6482 Power Transistor RCA
2N6483 Low Noise Dual N-Channel JFET Intersil

Other Datasheets by National Semiconductor (Texas Instruments)

Part Number Description
2N6483 N-Channel Monolithic Dual JFET
2N6485 N-Channel Monolithic Dual JFET
2N6427 NPN Darlington Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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a Process 95 2N6483-85 N-Channel Monolithic Dual JFETs General Description The 2N6483 thru 2N6485 series of N-channel monolithic dual JFETs is designed for low to medium frequency low noise differential amplifier applications requiring tight match and high common-mode rejection. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current -50V 50 mA Device Dissipation (Each Side), Ta = 85°C (Derate 2.56 mW/°C) 250 mW Total Device Dissipation, Ta = 85' (Derate 4.3 mW/°C) 500 mW Storage Temperature Range 65° C to +200° C Lead Temperature (1/16" from case for 10 seconds) 300°C ~" 0.175-0.195 (4.445-4.9531 SEATING PLANE 0.209 0.230 ""(5.309 5.842) 0.170-0210 14^18-5^3^) I HID IB... 0.016-0.019 " M6 0.483) i'r 029 - 048 0711 1.