Datasheet4U Logo Datasheet4U.com

CD4002C - Dual 4-Input NOR(NAND) Gate

Datasheet Summary

Description

These NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage This results in high noise immunity over a wide supply voltage range No DC p

Features

  • Y Y Y Wide supply voltage range Low power High noise immunity 3 0V to 15V 10 nW (typ ) 0 45 VDD (typ ).

📥 Download Datasheet

Datasheet preview – CD4002C

Datasheet Details

Part number CD4002C
Manufacturer National Semiconductor
File Size 107.87 KB
Description Dual 4-Input NOR(NAND) Gate
Datasheet download datasheet CD4002C Datasheet
Additional preview pages of the CD4002C datasheet.

📁 Similar Datasheet

  • CD4002A - CMOS NOR Gate (RCA)
  • CD4002B - CMOS NOR Gate (RCA)
  • CD4002B - CMOS NOR Gates (Texas Instruments)
  • CD4002BE - CMOS NOR Gates (Texas Instruments)
  • CD4002BF3A - CMOS NOR Gates (Texas Instruments)
  • CD4002BF3A - CMOS NOR Gates (Texas Instruments)
  • CD4002BM - CMOS NOR Gates (Texas Instruments)
  • CD4002BMS - CMOS NOR Gate (Intersil Corporation)
  • CD4002UB - CMOS NOR Gate (RCA)
  • CD4000 - Codoor Installation & User Manual (Siemens)
Other Datasheets by National Semiconductor
  • CD4002M - Dual 4-Input NOR(NAND) Gate
  • CD4001BC - NOR Buffered B Series Gate
  • CD4001BM - NOR Buffered B Series Gate
  • CD4006BC - 18-Stage Static Shift Register
  • CD4006BM - 18-Stage Static Shift Register
  • CD4007 - Dual Complementary Pair Plus Inverter
  • CD4007C - Dual Complementary Pair Plus Inverter
  • CD4007M - Dual Complementary Pair Plus Inverter

Full PDF Text Transcription

Click to expand full text
CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND Gate March 1988 CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND Gate General Description These NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage This results in high noise immunity over a wide supply voltage range No DC power other than that caused by leakage current is consumed during static conditions All inputs are protected against static discharge and latching conditions Features Y Y Y Wide supply voltage range Low power High noise immunity 3 0V to 15V 10 nW (typ ) 0 45 VDD (typ ) Applications Y Y Y Y Automotive Data t
Published: |