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National Semiconductor Electronic Components Datasheet

LF356 Datasheet

JFET Input Operational Amplifiers

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LF356 pdf
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December 2001
LF155/LF156/LF256/LF257/LF355/LF356/LF357
JFET Input Operational Amplifiers
General Description
These are the first monolithic JFET input operational ampli-
fiers to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FETTech-
nology). These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.
Features
Advantages
n Replace expensive hybrid and module FET op amps
n Rugged JFETs allow blow-out free handling compared
with MOSFET input devices
n Excellent for low noise applications using either high or
low source impedance — very low 1/f corner
n Offset adjust does not degrade drift or common-mode
rejection as in most monolithic amplifiers
n New output stage allows use of large capacitive loads
(5,000 pF) without stability problems
n Internal compensation and large differential input voltage
capability
Applications
n Precision high speed integrators
n Fast D/A and A/D converters
n High impedance buffers
n Wideband, low noise, low drift amplifiers
n Logarithmic amplifiers
n Photocell amplifiers
n Sample and Hold circuits
Common Features
n Low input bias current: 30pA
n Low Input Offset Current: 3pA
n High input impedance: 1012
n Low input noise current:
n High common-mode rejection ratio:
n Large dc voltage gain: 106 dB
100 dB
Uncommon Features
j Extremely
fast settling
time to
0.01%
j Fast slew
rate
j Wide gain
bandwidth
j Low input
noise
voltage
LF155/
LF355
4
5
2.5
20
LF156/
LF256/
LF356
1.5
12
5
12
LF257/
LF357
(AV=5)
1.5
50
20
12
Units
µs
V/µs
MHz
Simplified Schematic
ww*3wpF.iDn LaF3t5a7 Sserhiese. et4U.com
BI-FET, BI-FET IIare trademarks of National Semiconductor Corporation.
© 2001 National Semiconductor Corporation DS005646
00564601
www.national.com


National Semiconductor Electronic Components Datasheet

LF356 Datasheet

JFET Input Operational Amplifiers

No Preview Available !

LF356 pdf
www.DataSheet4U.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
LF155/6
LF256/7/LF356B
LF355/6/7
Supply Voltage
±22V
±22V
±18V
Differential Input Voltage
±40V
±40V
±30V
Input Voltage Range (Note 2)
±20V
±20V
±16V
Output Short Circuit Duration
Continuous
Continuous
Continuous
TJMAX
H-Package
150˚C
115˚C
115˚C
N-Package
100˚C
100˚C
M-Package
100˚C
100˚C
Power Dissipation at TA = 25˚C (Notes
1, 8)
H-Package (Still Air)
560 mW
400 mW
400 mW
H-Package (400 LF/Min Air Flow)
1200 mW
1000 mW
1000 mW
N-Package
670 mW
670 mW
M-Package
380 mW
380 mW
Thermal Resistance (Typical) θJA
H-Package (Still Air)
160˚C/W
160˚C/W
160˚C/W
H-Package (400 LF/Min Air Flow)
65˚C/W
65˚C/W
65˚C/W
N-Package
130˚C/W
130˚C/W
M-Package
195˚C/W
195˚C/W
(Typical) θJC
H-Package
23˚C/W
23˚C/W
23˚C/W
Storage Temperature Range
−65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚C
Soldering Information (Lead Temp.)
Metal Can Package
Soldering (10 sec.)
300˚C
300˚C
300˚C
Dual-In-Line Package
Soldering (10 sec.)
260˚C
260˚C
260˚C
Small Outline Package
Vapor Phase (60 sec.)
215˚C
215˚C
Infrared (15 sec.)
220˚C
220˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of
soldering surface mount devices.
ESD tolerance
(100 pF discharged through 1.5k)
1000V
1000V
1000V
DC Electrical Characteristics
(Note 3)
Symbol
Parameter
Conditions
VOS Input Offset Voltage
VOS/T
Average TC of Input
Offset Voltage
TC/VOS Change in Average TC
with VOS Adjust
wwwI.ODS ataShIenpeutt4OUffs.ect oCumrrent
RS=50, TA=25˚C
Over Temperature
RS=50
RS=50, (Note 4)
TJ=25˚C, (Notes 3, 5)
TJTHIGH
LF155/6
LF256/7
LF356B
LF355/6/7
Min Typ Max Min Typ Max Min Typ Max
35
35
3 10
7 6.5 13
Units
mV
mV
5 5 5 µV/˚C
0.5
3 20
20
0.5
3 20
1
µV/˚C
0.5
per mV
3 50 pA
2 nA
www.national.com
2


Part Number LF356
Description JFET Input Operational Amplifiers
Maker National Semiconductor
Total Page 23 Pages
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