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National Semiconductor Electronic Components Datasheet

LM394 Datasheet

LM194/LM394 Supermatch Pair

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December 1994
LM194 LM394 Supermatch Pair
General Description
The LM194 and LM394 are junction isolated ultra well-
matched monolithic NPN transistor pairs with an order of
magnitude improvement in matching over conventional tran-
sistor pairs This was accomplished by advanced linear pro-
cessing and a unique new device structure
Electrical characteristics of these devices such as drift ver-
sus initial offset voltage noise and the exponential relation-
ship of base-emitter voltage to collector current closely ap-
proach those of a theoretical transistor Extrinsic emitter
and base resistances are much lower than presently avail-
able pairs either monolithic or discrete giving extremely low
noise and theoretical operation over a wide current range
Most parameters are guaranteed over a current range of
1 mA to 1 mA and 0V up to 40V collector-base voltage
ensuring superior performance in nearly all applications
To guarantee long term stability of matching parameters
internal clamp diodes have been added across the emitter-
base junction of each transistor These prevent degradation
due to reverse biased emitter current the most common
cause of field failures in matched devices The parasitic iso-
lation junction formed by the diodes also clamps the sub-
strate region to the most negative emitter to ensure com-
plete isolation between devices
The LM194 and LM394 will provide a considerable improve-
ment in performance in most applications requiring a closely
matched transistor pair In many cases trimming can be
eliminated entirely improving reliability and decreasing
costs Additionally the low noise and high gain make this
device attractive even where matching is not critical
The LM194 and LM394 LM394B LM394C are available in
an isolated header 6-lead TO-5 metal can package The
LM394 LM394B LM394C are available in an 8-pin plastic
dual-in-line package The LM194 is identical to the LM394
except for tighter electrical specifications and wider temper-
ature range
Features
Y Emitter-base voltage matched to 50 mV
Y Offset voltage drift less than 0 1 mV C
Y Current gain (hFE) matched to 2%
Y Common-mode rejection ratio greater than 120 dB
Y Parameters guaranteed over 1 mA to 1 mA collector
current
Y Extremely low noise
Y Superior logging characteristics compared to
conventional pairs
Y Plug-in replacement for presently available devices
Typical Applications
Low Cost Accurate Square Root Circuit
IOUT e 10b5 010 VIN
Low Cost Accurate Squaring Circuit
IOUT e 10b6 (VIN)2
C1995 National Semiconductor Corporation TL H 9241
TL H 9241 – 1
Trim for full scale accuracy
TL H 9241 – 2
RRD-B30M115 Printed in U S A


National Semiconductor Electronic Components Datasheet

LM394 Datasheet

LM194/LM394 Supermatch Pair

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Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 4)
Collector Current
20 mA
Collector-Emitter Voltage
Collector-Emitter Voltage
LM394C
VMAX
35V
20V
Collector-Base Voltage
LM394C
35V
20V
Collector-Substrate Voltage
LM394C
35V
20V
Collector-Collector Voltage
LM394C
35V
20V
Base-Emitter Current
g10 mA
Power Dissipation
500 mW
Junction Temperature
LM194
LM394 LM394B LM394C
b55 C to a125 C
b25 C to a85 C
Storage Temperature Range
b65 C to a150 C
Soldering Information
Metal Can Package (10 sec )
Dual-In-Line Package (10 sec )
Small Outline Package
Vapor Phase (60 sec )
Infrared (15 sec )
260 C
260 C
215 C
220 C
See AN-450 ‘‘Surface Mounting and their Effects on Prod-
uct Reliability’’ for other methods of soldering surface
mount devices
Electrical Characteristics (TJ e 25 C)
Parameter
Conditions
LM194
LM394
LM394B 394C
Min Typ Max Min Typ Max Min Typ Max
Units
Current Gain (hFE)
Current Gain Match
(hFE Match)
100
e
DIB
hFE(MIN)
IC
Emitter-Base Offset
Voltage
Change in Emitter-Base
Offset Voltage vs
Collector-Base Voltage
(CMRR)
VCB e 0V to VMAX (Note 1)
IC e 1 mA
IC e 100 mA
IC e 10 mA
IC e 1 mA
VCB e 0V to VMAX
IC e 10 mA to 1 mA
IC e 1 mA
VCB e 0
IC e 1 mA to 1 mA
(Note 1)
IC e 1 mA to 1 mA
VCB e 0V to VMAX
350 700
350 550
300 450
200 300
05
10
25
10
300 700
250 550
200 450
150 300
2 05
10
100 25
25 10
225 500
200 400
150 300
100 200
4 10
20
150 50
50 10
5
200
100
%
%
mV
mV
Change in Emitter-Base
Offset Voltage vs
Collector Current
VCB e 0V
IC e 1 mA to 0 3 mA
5 25
5 50
5 50
mV
Emitter-Base Offset
Voltage Temperature
Drift
Logging Conformity
Collector-Base Leakage
Collector-Collector
Leakage
IC e 10 mA to 1 mA (Note 2)
IC1 e IC2
VOS Trimmed to 0 at 25 C
IC e 3 nA to 300 mA
VCB e 0 (Note 3)
VCB e VMAX
VCC e VMAX
0 08 0 3
0 03 0 1
150
0 05 0 25
01 20
0 08 1 0
0 03 0 3
150
0 05 0 5
01 50
02 15
0 03 0 5
mV C
mV C
150 mV
0 05 0 5
01 50
nA
nA
Input Voltage Noise
IC e 100 mA VCB e 0V
f e 100 Hz to 100 kHz
18
18
1 8 nV 0Hz
Collector to Emitter
IC e 1 mA IB e 10 mA
02
02
02 V
Saturation Voltage
IC e 1 mA IB e 100 mA
01
01
01 V
Note 1 Collector-base voltage is swept from 0 to VMAX at a collector current of 1 mA 10 mA 100 mA and 1 mA
Note 2 Offset voltage drift with VOS e 0 at TA e 25 C is valid only when the ratio of IC1 to IC2 is adjusted to give the initial zero offset This ratio must be held to
within 0 003% over the entire temperature range Measurements taken at a25 C and temperature extremes
Note 3 Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation
Note 4 Refer to RETS194X drawing of military LM194H version for specifications
2


Part Number LM394
Description LM194/LM394 Supermatch Pair
Maker National Semiconductor
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LM394 Datasheet PDF






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