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LMV651 Datasheet

Low Power Amplifier

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PRELIMINARY
September 2005
LMV651
12 MHz, Low Voltage, Low Power Amplifier
General Description
National’s LMV651 is a high performance, low power op amp
IC implemented in National’s advanced VIP50 process. The
unity gain stable LMV651 features 12 MHz of bandwidth
while consuming only 110 uA of current, an exceptional
bandwidth to power ratio in this op amp class, and maintains
stability for capacitive loads as large as 500 pF.
The LMV651 provides superior performance and economy in
terms of power and space usage. The LMV651 has a maxi-
mum input offset voltage of 1 mV, a rail to rail output stage
and an input common-mode voltage range that includes
ground. The LMV651 provides a PSRR of 95 dB, a CMRR of
100 dB and a total harmonic distortion (THD) of 0.003% at
1 kHz frequency and 600load
The LMV651 has an operating supply voltage range from
2.7V to 5.5V. The LMV651 can operate over a wide tempera-
ture range (-40˚C to +125˚C) making the op amp ideal for
automotive applications, sensor applications and portable
equipment applications. The LMV651 is available in the ultra
tiny SC70-5 package, which is about half the size of the
SOT23-5.
Features
(Typical 5V supply, unless otherwise noted)
n Guaranteed 3.0V and 5.0V performance
n High unity gain bandwidth
12 MHz
n Low power supply current
110 µA
n Max input offset voltage
1 mV
n Capacitive load drive capability
500 pF
n CMRR
100 dB
n PSRR
95 dB
n Input referred voltage noise
17nV/
n Output swing with 2 kload
50 mV from rail
n Total harmonic distortion
0.003% @ 1 kHz, 600
n Temperature range
−40˚C to 125˚C
Applications
n Portable equipment
n Automotive
n Battery powered systems
n Sensors and Instrumentation
20123806
Open Loop Gain and phase vs. Frequency
THD+N vs. Frequency
20123805
© 2005 National Semiconductor Corporation DS201238
DataSheet4 U .com
www.national.com


National Semiconductor Electronic Components Datasheet

LMV651 Datasheet

Low Power Amplifier

No Preview Available !

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body
Machine Model
VIN Differential
Supply Voltage (V+ - V)
Input/Output Pin Voltage
Storage Temperature Range
Junction Temperature (Note 3)
2 KV
200V
±0.3V
6V
V+ +0.3V, V−0.3V
−65˚C to +150˚C
+150˚C
Soldering Information
Infrared or Convection (20 sec)
Wave Soldering Lead Temp (10
sec)
235˚C
260˚C
Operating Ratings (Note 1)
Temperature Range
−40˚C to 125˚C
Supply Voltage
2.7V to 5.5V
Package Thermal Resistance (θJA)(Note 3)
5-Pin SC70
456˚C/W
3V DC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TA = 25˚C, V+ = 3V, V= 0V, VO = VCM = V+/2, and RL > 1 M.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
VOS
IB
IOS
CMRR
PSRR
CMVR
Input Offset Voltage
Input Bias Current
Input Offset Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Common-Mode Voltage
Range
(Note 6)
0 VCM1.5V
3.0 V+ 5V,
VO = 1.5V, VCM = 0.5
CMRR 50 dB
Min
(Note 5)
90
85
Typ
(Note 4)
−0.1
80
2.2
100
95
Max
(Note 5)
±1
Units
mV
nA
nA
dB
dB
0 2V
AVOL
VO
ISC
IS
SR
Large Signal Voltage Gain
Output Swing High
Output Swing Low
Output Short Circuit Current
Supply Current per Amplifier
Slew Rate
0.5 VO 2.5, RL = 2 k
0.5 VO 2.5, RL = 10 k
RL = 2 kto V+/2
RL = 10 kto V+/2
RL = 2 kto V+/2
RL = 10 kto V+/2
Sourcing to V+/2
VIN Differential = 100 mV (Note 8)
Sinking from V+/2
VIN Differential = −100 mV (Note 8)
AV = +1,
10% to 90% (Note 7)
14
50
83
dB
93
50
30 mV from
50 rail
30
17
mA
53
110 125
µA
2.8
V/µs
GBW
Gain Bandwidth Product
12 MHz
en Input-Referred Voltage Noise f = 100 kHz
f = 1 kHz
17
nV/
17
in Input-Referred Current Noise f = 100 kHz
f = 1 kHz
0.15
0.1
pA/
THD
Total Harmonic Distortion
f = 1 kHz, AV = 2, RL = 600
0.003
%
www.national.com
DataSheet4 U .com
2


Part Number LMV651
Description Low Power Amplifier
Maker National Semiconductor
Total Page 5 Pages
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