900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




National Semiconductor Electronic Components Datasheet

LMX2216 Datasheet

0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications

No Preview Available !

August 1995
LMX2216
0 1 GHz to 2 0 GHz Low Noise Amplifier Mixer
for RF Personal Communications
General Description
The LMX2216 is a monolithic integrated low noise amplifier
(LNA) and mixer suitable as a first stage amplifier and down-
converter for RF receiver applications The wideband oper-
ating capabilities of the LMX2216 allow it to function over
frequencies from 0 1 GHz to 2 0 GHz It is fabricated using
National Semiconductor’s ABiC IV BiCMOS process
All input and output ports of the LMX2216 are single-ended
The LNA input and output ports are designed to interface to
a 50X system The Mixer input ports are matched to 50X
The output port is matched to 200X The only external com-
ponents required are DC blocking capacitors The balanced
architecture of the LMX2216 maintains consistent operating
parameters from unit to unit since it is implemented in a
monolithic device This consistency provides manufacturers
a significant advantage since tuning procedures often
needed with discrete designs can be reduced or eliminat-
ed
The low noise amplifier produces very flat gain over the en-
tire operating range The doubly-balanced Gilbert-cell mixer
provides good LO-RF isolation and cancellation of second-
order distortion products A power down feature is imple-
mented on the LMX2216 that is especially useful for stand-
by operation common in Time Division Multiple Access
(TDMA) and Time Division Duplex (TDD) systems
The LMX2216 is available in a narrow-body 16-pin surface
mount plastic package
Features
Y Wideband RF operation from 0 1 GHz to 2 0 GHz
Y No external biasing components necessary
Y 3V operation
Y LNA input and output ports matched to 50X
Y Mixer input ports matched to 50X output port matched
to 200X
Y Doubly balanced Gilbert cell mixer (single ended input
and output)
Y Low power consumption
Y Power down feature
Y Small outline plastic surface mount package
Applications
Y Digital European Cordless Telecommunications (DECT)
Y Portable wireless communications (PCS PCN cordless)
Y Wireless local area networks (WLANs)
Y Digital cellular telephone systems
Y Other wireless communications systems
Functional Block Pin Diagram
Order Number LMX2216M
See NS Package Number M16A
TL W 11814 – 1
C1995 National Semiconductor Corporation TL W 11814
RRD-B30M115 Printed in U S A


National Semiconductor Electronic Components Datasheet

LMX2216 Datasheet

0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications

No Preview Available !

Pin Description
Pin Pin I O
No Name
Description
1 VCC M
I Voltage supply for the mixer The input voltage level to this pin should be a DC Voltage ranging from
2 85V to 3 15V
2 GND
Ground
3 LNAIN
4 GND
I RF input signal to the LNA External DC blocking capacitor is required
Ground
5 GND
Ground
6 RFIN
I RF input to the mixer The RF signal to be down converted is connected to this pin External DC
blocking capacitor is required
7 GND
Ground
8 PWDN
9 IFOUT
10 GND
I Power down signal pin Both the LNA and mixer are powered down when a HIGH level is applied to
this pin (VIH)
O IF output signal of the mixer External DC blocking capacitor is required
Ground
11 LOIN
12 GND
I Local oscillator input signal to the mixer External DC blocking capacitor is required
Ground
13 GND
Ground
14 LNAOUT O Output of the LNA This pin outputs the amplified RF signal External DC blocking capacitor is
required
15 GND
Ground
16 VCC A
I LNA supply Voltage DC Voltage ranging from 2 85V to 3 15V
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage (VCC)
Storage Temperature (TS)
Operating Temperature (TO)
6 5V
b65 C to a150 C
b40 C to a85 C
Recommended Operating
Conditions
Supply Voltage (VCC)
Operating Temperature (TA)
RFIN
LOIN
2 85V – 3 15V
b10 C to a70 C
0 1 GHz to 2 0 GHz
0 1 GHz to 2 0 GHz
2


Part Number LMX2216
Description 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications
Maker National Semiconductor
Total Page 12 Pages
PDF Download

LMX2216 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 LMX2216 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications
National Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy