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National Semiconductor Electronic Components Datasheet

NA52 Datasheet

3.5Amp complementary power transistors

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Z ~NaHonalC..~ r---------------------------------------------------~--------------------_,
SemiconductorC. ~
-N
It)
<C
..Z NA51 (NPN)
~ NA52(PNP) 3.5Amp complementary power transistors
Z
-C.
Z
features
.... • .45 Volt/3.5 Amp rating
[!] packages and lead cod ina
It) • Available in TO-.126 and TO-220 packages
<C • Low Vce (sad and Voe (sat) charact!!ristics at
Z Ic=2A,IB=80mA
TO-126
TO-220
• Guaranteed Vce (sad and VBe (sat) at
Ic = 3A, 10 = 160 mA for improved short-
circuit protection design in audio amplifier
• "Epoxy B" packaging concept for excellent reliability
applications
• 6 to 14 Watt, 4 or 8 Ohm audio power amplifier
• High current switching circuits
• Converter/Inverter circuits
• TV receivers
~ maximum ratings
PACKAGE CODE
TO 126
TO 220
uW
PARAMETE,R
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (continuous)
Power Dissipation (TA = 25°C)
TO-126
TO-220
Power Dissipation (Tc = 25°C)
TO-126
TO-220
Thermal Resistance
TO-126
TO-220
Temperature, Junction and Storage .
SYMBOL
Vce
VCB
VeB
Ic (max)
Pi>
Po
8J1:i.l8JC
8JA/8JC
Tj. Tstg
RATING
45
50
4
3.5
1.8
2.0
30
30
69.4/4.17
62.5/4.17
-55to+150
UNIT
VOC
Voc
Voc
A
W
W
W
W
°C/W -
°C/W
°c
~ ordering information
"1" for NPN
~,--------------------- POLARITY "2" for PNP
NA5XX
t PACKAGE/LEAD CODE .
OJ' - - - - - - - - - - -
refer to
7·24


National Semiconductor Electronic Components Datasheet

NA52 Datasheet

3.5Amp complementary power transistors

No Preview Available !

~ electrical characteristics TC = 25'C
SYMBOL
BVCER
BVCBO
BVEBO
ICER
ICBO
VBE (on)
VBE (sat)
VBE (sat)
VCE (sat)
VCE (sat)
HFEl
Cob
PARAMETER
Collector-Emitter
SU$1:aining Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Leakage Current
Collector-Base
Leakage Current
Base-Emitter Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
DC Current Gain
Collector Output Capacitance
NPN types
PNP types
~ physical dimensions
CONDITIONS
IC = 10 inA, R = lK
MIN TYP MAX
45
Ic= 10Oj.tA
50
IE = 100llA
4
VCE = 35V, R = lK
1
VCB =40V
0_5
Ic = 15 mA, VCE = 10V 520 600
Ic = 2A, IB =80 mA
680
1.3
Ic = 3A, IB = 160 mA
1.6
Ic = 2A, IB = 80 mA
1.5
Ic = 3A,IB = 160mA
5
Ic = 500 mA, VCE = 10V
VCB =10V,f= 1 MHz
30
100
35
65
[!] heatsink information.
The TO-126 .and TO-220 packages
used with heatsink shown below
permits about 9.2 Watts power
dissipation and 6cA = 9.4'CIW.
»z
-UNIT
U1
-'"
Z
-..V
"'C
Z
V »z
-V U1
N
mA "'C
-Z
mA "'C
mV
V
V
V
V
ratio
pF
pF
TO-220
0.05 inch aluminium sheet
Mount· transistor under heatsink and
apply thermally conductive compound
betwean contact surfaces.
7-25


Part Number NA52
Description 3.5Amp complementary power transistors
Maker National Semiconductor
Total Page 4 Pages
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