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National Semiconductor Electronic Components Datasheet

NB112 Datasheet

100mA general purpose transistors

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" r---------------~----------------------------~----------------------~
az. ~National
-a. ~ SemiconductorM
N
"t"-
N NB111,112,113(NPN) 100mA general purpose transistors
N NB121,122,123(PNP)
features
W package and lead coding
... • 35 to 65 Volt at 100mA collector ratings
• 400m V guaranteed VCE (sat) characteristics at
"z Ic = 20mA and IB = O.4mA
a. • Matched HFE groupings for complementary applications,.
z • "Epoxy B" packaging concept for excellent reliability
-M
"t"-
"t"- applications
• Small signal amplifier circuits
• Medium current level switching circuits
• LE D drivers
• TV receivers
~ maximum ratings
TO-92
"2, .
PACKAGE CODE
TO-92
E
F
H
LEAD
12 3
EBe
Ee B
eBE
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (continuousl
Power Dissipation (TA = 25°C)
Power Dissipation (TC = 25°C)
Thermal Resistance
Temperature, Junction
and Storage
SYMBOL
NB111
NB121
NB112
NB122
NB113
NB123
UNIT
VCEO
VCB
VEB
Ie (max)
Po
Po
()JA
()JC
Tj, Tstg
35 50
40 55
66
100. 100
0_6 0_6
1.0 1.0
208 208
125 125
-55 to + 150 -55 to + 150
65
70
6
100
0_6
1.0
208
125
-55 to + 150
Voe
VOC
Voc
mADe
W
W
°CIW
°CIW
°c
~ ordering information
"1" for NPN
! ~..---------~I.------------POLARITY "2" for PNP
---VOLTAGE RATING
l____,___N B 1X X X X
tl ~.
rnrefer to
PACKAGE/LEAD
refer
CtoOD[IEJ
HFE GROUPING
refer to []]
7-44


National Semiconductor Electronic Components Datasheet

NB112 Datasheet

100mA general purpose transistors

No Preview Available !

~ electrical'characteristics Tc = 25°C
SYMBOL
BVCEO
BVCBO
BVEBO
ICEO
PARAMETER
Collector-Emitter Sustaining Voltage
NBlll/121
NB112/122
NBl13/123
Collector-Base Breakdown Voltage
NBlll/121
NBl12/122
NBl13/123
Emitter-Base Breakdown Voltage
Collector.-Emitter Leakage Current
ICBO
Collector-Base Leakage Current
lEBO
VBE(sat)
VeE(sat)
HFEl
Cob
ft
Emitter-Base Leakage Current
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
Collector Ouput Capacitance
NPN types
PNP types
Current Gain Bandwidth Product
lID HFE groupings
GROUPING
H
I
J
y
PARAMETER
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
00 physical dimensions
-L ,------.
:~~~.: C..'. :
I
T
[J
-.0165_
.0145
.694
tvo
L
--,
.018 typ
.~::"j I':'
- .136
-rr-
:8:1- :8:g
CONDITIONS
IC = 1 mA
Ic = 100J.LA
IE = 1OJ.LA
VCE = 30V NB111/121
45V NBl12/122
60V NB113/123
VCB = 35V NBlll/121
50V NBl12/122
65V NB113/123
VEB = 5V
Ie = 20 mA, IB = 0.4 rnA
IC = 20 rnA, IB = 0.4 rnA
Ie = 100!,-A, VCE = 5V
VCB = 10V, f = lMHz
IC = 15 rnA, VCE = 5V
MIN
35
50
65
40
55
70
6
50
100
TYP
0.8
0.15
2
3
MAX
2
2
2
0.1
0.1
0.1
0.1
0.95
0.4
UNIT
V
V
V
V
V
V
V
J.LA
!,-A
J.LA
J.LA
!,-A
J.LA
J.LA
V
V
ratio
pF
pF
MHz
CONDITIONS
Ie = 15mA, VCE =5V
IC = 15 rnA, VCE = 5V
IC = 15 mA, VCE = 5V
Ic = 15mA, VCE =5V
MIN
100
140
200
100
TYP
127
180
260
190
MAX
160
240
350
350
RAno
1: 1.6
1:1.6
1: 1.6
1:3.5
W max power dissipation
::
I
I
x... 1.2
E
~.., 1.0
0 O.B
i<"=-
ii;
0.6
~
0
c: 0.4
:w:
0 0.2
"-
:IE
x=>
:IE
a
<
:IE
"'- ~/ T = CAS1E TE~PER1TURf
III I
T = AMBIENT TEMPERATURE
"K~
t'-...~
~........
25 50 75 100 125 150 175 200
TEMPERATURE (T) - - DC
-..........
W
Z
-"tJ
Z
'"
.....
-N
W
"tJ
-Z
"tJ
7-45


Part Number NB112
Description 100mA general purpose transistors
Maker National Semiconductor
Total Page 4 Pages
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