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National Semiconductor Electronic Components Datasheet

NB223 Datasheet

500mA medium current driver transistors

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aaz~..
-(W)
r-----------------------------------------------------------------------------,
~National
D Semiconductor
C'I
C'I
NB 211.212.213 (NPN)
NB221.222.223(PNP) 500mA medium current driver transistors
features
[!J package and lead coding
• 35 to 65 Volt at 500 mA collector ratings
• 1.2 Watts practical power dissipation (TO-92 PLUSTM)
...
-~azz.
(,W...).
C'I
• 400 mV guaranteed VCE (sat) characteristics at
Ic = 100 mA and IB = 2 mA
• Matched HFE groupings for complementary applications
• "Epoxy B" packaging concept for excellent reliability
applications
• 4 to 6 Watt amplifier class A drivers
• Medium current level switching circuits
• LED drivers
• TV receivers
rn,,........ maximum ratings
C'I
zm PARAMETER
SYMBOL
NB211
NB221
PACKAGE COOE
TO-92
TO-92
PLUS
EX
FY
Z
H
NB212
NB222
LEAO
123
EBC
ECB
BCE
CBE
NB213
NB223
UNIT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (continuous)
Power Dissipation (TA = 25°C)
TO-92
TO-92 PLUS
Power Dissipation (Tc = 25°C)
TO-92
TO-92 PLUS
Thermal Resistance
TO-92
TO-92 PLUS
Temperature, Junction and Storage
VCEO
VCB
VEB
Ic (max)
Po
Po
35
40
6.0
SOO
0.6
0.75
1.0
2.5
50
55
6.0
500
0.6
0.75
1.0
2.5
65
70
6.0
500
0.6
0.75
1.0
2.5
8 J A / 8 JC
8JA/8JC
Tj, Tstg
208/125
208/125
167/SO
167/SO
-55 to +150 -55 to +150
208/125
167/50
-55 to +150
Voc
Voc
VOC
mA
W
W
W
W
°C/W
°C/W
°c
@] ordering information
NB2X! fXfi
POLARITY
"1" for NPN
"2" for PNP
VOLTAGE RATING
OJrefe'r to
rnPACKAGE/LEAD CODE
refer to
HFE GROUPING
refer to []]
7-48


National Semiconductor Electronic Components Datasheet

NB223 Datasheet

500mA medium current driver transistors

No Preview Available !

o electrical characteristics TC; 25°C
SYMBOL
PARAMETER
BVCEO
BVCBO
BVEBO
ICEO
Collector-Emitter Sustaining Voltage
NB21 1/221
NB212/222
NB213/223
Collector-Base Breakdown Voltage
NB211/221
NB212/222
NB2131223
Emitter-Base Breakdown Voltage
Collector-Emitter Leakage Current
ICBO
Collector-Base Leakage Current
lEBO
VBE (sat)
VCE (sat)
HFEl
Cob
ft
Emitter·Base Leakage Current
Base·Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
Collector Output Capacitance
NPN types
PNP types
Current Gain Bandwidth Product
CONDITIONS
Ic; 1 rnA
IC; l00IlA
IE; 10llA
VCE ; 30V NB21 1/221
45V NB212/222
60V NB213/223
VCB; 35V NB211/221
50V NB212/222
65V NB213/223
VEB ; 5V
Ic ; 100 rnA, IB ; 2 mA
Ic = 100 rnA, IB = 2 mA
Ic = 1 rnA, VCE ; 5V
VCB; 10V, f = 1 MHz
Ic ; 20 mA, VCE ; 5V
MIN
"
typ
MAX
35
50
65
40
55
70
6
10
10
10
0.5
0.5
0.5
0.1
0.8 0.95
0.2 0.4
30
3.5
4.5
50
~HFE groupings
GROUPING
PARAMETER
G DC Current Gain
H DC Current Gain
I DC Current Gain
J DC Current Gain
X DC Current Gain
y DC Current Gain
[§J physical dimensions
CONDITIONS
MIN TYP MAX
Ic; 30 rnA, V CE ; 5V
Ic = 30 rnA, VCE ; 5V
Ic=30mA,VCE=5V
Ic = 30 rnA, VCE ; 5V
Ic = 30 rnA, VCE ; 5V
Ic=30mA,VCE;5V
68
100
140
200
30
100
85 110
127 160
180 240
260 350
58 110
190 250
[I] heatsink information
UNIT
V
V
V
V
V
V
V
)lA
)lA
)lA
)lA
IlA
IlA
)lA
V
V
ratio
pF
pF
MHz
RATIO
1:1.6
1:1.6
1:1.6
1: 1.6
1:3.5
1:3.5
TQ-92
[0
:8lU- -
TQ-92 PLUS
_~ ..1'096' _
T.,.;t:;...L"}. .'".020A
.185 1
r-
_r..100 ,111)' '
1YP
tJ
1
" ..594
I ,01. typ
'O'~~;;-i1-,1-4-0L-
- .130
-,-;--
:S2l - :8::
_t.~k<?0.3 =-:l
--L. -+solder
tab here
I~0:.4T
0.030
-L
STEEL SHEET
~0.125
• TO-92 PLUS package with heat-
',sink shown on right permits 1.6
Watts power dissipation and
combined Thermal Resistance
()JA ; 78°C/W. If used without
heatsink and PCB land area at
collector lead > 1 sq. inch,
PD = 1.2W.
N
-~
(,,)
Z
-"tJ
Z
~
z
OJ
N
N
~
N
-N
(,,)
"tJ
-Z
"tJ
7-49


Part Number NB223
Description 500mA medium current driver transistors
Maker National Semiconductor
Total Page 4 Pages
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