2SB1477 Overview
Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) Wide Area of Safe Operation plement to Type 2SD2236 -^ ^ j : j , ft 1 I 1 2 3 f C -- <" 3 PIN 1.BASE.
2SB1477 datasheet by New Jersey Semi-Conductor.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2SB1477 |
|---|---|
| Datasheet | 2SB1477 2SB1477_NewJerseySemi Datasheet (PDF) |
| File Size | 90.61 KB |
| Manufacturer | New Jersey Semi-Conductor |
| Description | Silicon PNP Power Transistor |
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Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) Wide Area of Safe Operation plement to Type 2SD2236 -^ ^ j : j , ft 1 I 1 2 3 f C -- <" 3 PIN 1.BASE.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SB1477 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1477 | PNP Transistor | INCHANGE |
View all New Jersey Semi-Conductor datasheets
| Part Number | Description |
|---|---|
| 2SB1478 | Silicon PNP Darlington Power Transistor |
| 2SB1502 | Silicon PNP Darlington Power Transistor |
| 2SB1503 | Silicon PNP Darlington Power Transistor |
| 2SB1507 | Silicon PNP Power Transistor |
| 2SB850 | GENERAL PURPOSE POWER AMPLIFIER |