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BF961 - N-Channel Dual Gate MOS-Fieldeffect Tetrode

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New Jersey Semi-Conductor

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BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode by New Jersey Semi-Conductor - Datasheet Preview — Datasheet preview – BF961

Datasheet Details

Part number	BF961
Manufacturer	New Jersey Semi-Conductor
File Size	89.73 KB
Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet	BF961 Datasheet
Note	This datasheet PDF includes multiple part numbers: BF961, BF961-NewJerseySemi. Please refer to the document for exact specifications by model.
Additional preview pages of the BF961 datasheet.

Product details

Features

Integrated gate protection diodes.
High cross modulation performance.
Low noise figure.
High AGC-range.
Low feedback capacitance.
Low input capacitance -OD BF961 Marking: BF961 ^ Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4=Gate 2 -OS Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature.

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Published: Apr 1, 2024 |