Datasheet4U Logo Datasheet4U.com

11EQS03L - Low Forward Voltage drop Diode

Features

  • ∗ Miniature Size.
  • Extremely Low Forward Voltage Drop.
  • Low Forward Voltage Drop.
  • High Surge Capability.
  • 30volts trough 100volts Types Available.
  • 26mm and 52mm Inside Tape Spacing Package Available.

📥 Download Datasheet

Datasheet preview – 11EQS03L

📁 Similar Datasheet

  • 11E1 - SILICON RECTIFIER DIODES (EIC)
  • 11E2 - SILICON RECTIFIER DIODES (EIC)
  • 11E4 - SILICON RECTIFIER DIODES (EIC)
  • 11E6 - SILICON RECTIFIER DIODES (EIC)
  • 11ES1 - SILICON RECTIFIER DIODES (EIC)
  • 11ES2 - SILICON RECTIFIER DIODES (EIC)
Other Datasheets by Nihon Inter Electronics
  • 11EQS04 - Low Forward Voltage Drop Diode
  • 11EQS06 - Low Forward Voltage drop Diode
  • 11EQS09 - Schottky Barrier Diode
  • 11EQS10 - Low Forward Voltage drop Diode
  • 11EQ04 - Schottky Barrier Diode
  • 11EQ06 - Low Forward Voltage drop Diode
  • 11EQ09 - Low Forward Voltage drop Diode
  • 11EQ10 - Low Forward Voltage drop Diode

Full PDF Text Transcription

Click to expand full text
SBD Type :11EQS03L FEATURES ∗ Miniature Size * Extremely Low Forward Voltage Drop * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11EQS03L Unit Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board Mounted * RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM IO IF(RMS) IFSM Tjw Tstg 30 V 1.0 Ta=36°C Half Sine Wave Resistive Load 1.0 Ta=55°C A 1.
Published: |