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11EQS09 - Schottky Barrier Diode

Features

  • Miniature Size.
  • Low Forward Voltage Drop.
  • High Surge Capability.
  • 30volts trough 100volts Types Available.
  • 26mm and 52mm Inside Tape Spacing Package Available.

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Other Datasheets by Nihon Inter Electronics
  • 11EQS03L - Low Forward Voltage drop Diode
  • 11EQS04 - Low Forward Voltage Drop Diode
  • 11EQS06 - Low Forward Voltage drop Diode
  • 11EQS10 - Low Forward Voltage drop Diode
  • 11EQ04 - Schottky Barrier Diode
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Full PDF Text Transcription

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SBD Type :11EQS09 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11EQS09 Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board Mounted * RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM IO IF(RMS) IFSM Tjw Tstg 90 1.0 Ta=30°C 50Hz Half Sine Wave 1.0 Ta=55°C Resistive Load 1.
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