Datasheet4U Logo Datasheet4U.com

C20T10Q-11A - Schottky Diodes

Key Features

  • Tabless TO-220.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.45g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 180 20 C20T10Q-11A 100 50 Hz Full Sine Wave Tc=120°C Resistive Load 22.2 50Hz Full Sine Wave ,1cyc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C20T10Q-11A Schottky Barrier Diode Kyocera
C20T10Q Schottky Barrier Diode Kyocera
C20T04Q Schottky Barrier Diode Kyocera
C20T04Q-11A Schottky Barrier Diode Kyocera
C20T06Q Schottky Barrier Diode Kyocera

Other Datasheets by Nihon Inter Electronics

Part Number Description
C20T10Q Schottky Diodes
C20T03QL SBD
C20T03QL-11A SBD
C20T03QLH SBD
C20T03QLH-11A SBD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SBD T y p e : C20T 20T10Q 10Q-11A OUTLINE DRAWING FEATURES *Tabless TO-220 *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.45g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 180 20 C20T10Q-11A 100 50 Hz Full Sine Wave Tc=120°C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 10 A per arm Min.