FSH10A04B
FSH10A04B is Schottky Barrier Diode manufactured by Nihon Inter Electronics.
FEATURES
- Similar to TO-220AB Case
- Fully Molded Isolation
- Low Forward Voltage Drop
- Low Power Loss,High Efficiency
- High Surge Capability
- Tj=150 °C operation
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Maximum Ratings
Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current RMS Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque
Approx Net Weight: 1.75g
Symbol
VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg Ftor
FSH10A04B 40 45(pulse width ≤ 1µs duty ≤ 1/50) 50 Hz half Sine Wave 10 Tc=127°C Resistive Load 15.7 50Hz Half Sine Wave ,1cycle 180 Non-repetitive -40 to +150 -40 to +150 remended torque = 0.5
Unit V V A A A
°C °C N- m
Electrical
- Thermal Characteristics
Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Rth(j-c) Rth(c-f) Conditions Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 10 A Junction to Case Cace to Fin Min. Typ. Max. 1 0.61 3 1.5 Unit m A V °C /W °C /W
FSH_A_B OUTLINE DRAWING (Dimensions in mm)
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FORWARD CURRENT VS. VOLTAGE
FSH10A04/FSH10A04B
INSTANTANEOUS FORWARD CURRENT (A)
20 Tj=25°C Tj=150°C 10
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1 0 0.2 0.4 0.6 0.8 1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
CONDUCTION ANGLE
AVERAGE FORWARD POWER DISSIPATION
FSH10A04/FSH10A04B
D.C....