PBMB50B12C Datasheet | Nihon Inter Electronics

IGBT MODULE CIRCUIT G1 E1 U G2 E2 G3 E3 V G4 E4 H-Bridge 50A 1200V OUTLINE DRAWING PBMB50B12 G3 E3 V G4 E4 G5 E5 W G6 E6 8- fasten- tab No 110 4- fasten-tab No 250 Dimension(mm) .. Approximate Weight : 200g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR 1200 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2 - Unit V V A W °C °C V N- m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50m A VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 12 ohm RG= 20 ohm VGE= +/- 15V Min. - Typ. 1.9 4200 0.25 0.40 0.25 0.80 Max. 1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit m A µA V V p F µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 50 100 Unit A...