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PHM5601 - MOSFET MODULE Single 560A/150V

Features

  • Trench Gate MOS FET Module Single 560A /150V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOSFET MODULE FEATURES * Trench Gate MOS FET Module Single 560A /150V OUTLINE DRAWING PHM5601 * Super Low Rds(ON) 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs MAXMUM RATINGS Ratings Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C. Approximate Weight : 650g Symbol VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR M4 M8 PHM5601 150 +/ - 20 560 (Tc=25°C) 440 (Tc=25°C) 1,120 Tc=25°C) 1,780 Tc=25°C) -40 to +150 -40 to +125 2,500 3.0 1.4 10.
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