P5504EDG - P-Channel Logic Level Enhancement

NIKO-SEM

Download the P5504EDG datasheet PDF. This datasheet also covers the P5504EDG_Niko variant, as both devices belong to the same p-channel logic level enhancement family and are provided as variant models within a single manufacturer datasheet.

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P5504EDG p-channel logic level enhancement by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P5504EDG_Niko-Sem.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P5504EDG
Manufacturer	NIKO-SEM
File Size	409.47 KB
Description	P-Channel Logic Level Enhancement
Datasheet	P5504EDG Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
P5504EDG	P-Channel MOSFET	UNIKC
P5504EVG	P-Channel MOSFET	UNIKC
P5504EVG	P-Channel Logic Level Enhancement Mode Field Effect Transistor	Niko
P5503QV	N&P-Channel MOSFET	UNIKC
P5506BDA	N-Channel MOSFET	INCHANGE

Other Datasheets by NIKO-SEM

Part Number	Description
P5506BDA	N-Channel Enhancement Mode Field Effect Transistor
P5506BVA	N-Channel Enhancement Mode Field Effect Transistor
P5506HPG	Dual N-Channel MOSFET
P5515BD	N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -40 ±20 -21 -13 -39 41 16 -55 to 150 UNITS V V TC = 25 °C TC = 100 °C ID IDM A TC = 25 °C TC = 100 °C PD Tj, Tstg W °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJC RθJA TYPICAL MAXIMUM 3 75 UNITS °C / W °C / W Pulse width limited by maximum junction temperature.