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PE5B5DX - Dual P-Channel FET

Download the PE5B5DX datasheet PDF. This datasheet also covers the PE5B5DX-Niko variant, as both devices belong to the same dual p-channel fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE5B5DX-Niko-Sem.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE5B5DX
Manufacturer NIKO-SEM
File Size 324.60 KB
Description Dual P-Channel FET
Datasheet download datasheet PE5B5DX Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM Dual P-Channel Enhancement PE5B5DX Mode Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 20mΩ ID -30A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. D1 D1 D2 D2 #1 S1 G1 S2 G2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current4 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.