The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package.
Full PDF Text Transcription for NPT2019 (Reference)
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NPT2019. For precise diagrams, and layout, please refer to the original PDF.
NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and...
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oprietary GaN-on-Silicon technology Features Suitable for linear and pulsed applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Efficiency (>60%) Applications Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L/S-Band Radar DC-6 GHz 25W GaN HEMT Product Description The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package. R
NPT2019 Datasheet
