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M36P0R9060E0 - 512 Mbit Flash memory 64 Mbit (Burst) PSRAM

General Description

6 Signal descriptions

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Key Features

  • Partial Array Self-Refresh (PASR).
  • Deep Power-Down (DPD) Mode.
  • Automatic Temperature-compensated SelfRefresh PSRAM.
  • Programming time.
  • 4.2µs typical Word program time using Buffer Enhanced Factory Program command www. DataSheet4U. com.
  • Memory organization.
  • Multiple Bank memory array: 64 Mbit banks.
  • Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations.
  • program/erase in one Bank while read i.

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Datasheet Details

Part number M36P0R9060E0
Manufacturer Numonyx
File Size 474.27 KB
Description 512 Mbit Flash memory 64 Mbit (Burst) PSRAM
Datasheet download datasheet M36P0R9060E0 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M36P0R9060E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 64 Mbit (4Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.