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M58BW016DB - 16 Mbit 3V supply Flash memories

Features

  • Supply voltage.
  • VDD = 2.7 V to 3.6 V for program, erase and read.
  • VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers.
  • VPP = 12 V for fast program (optional) High performance.
  • Access times: 70, 80 ns.
  • 56 MHz effective zero wait-state burst read.
  • Synchronous burst read.
  • Asynchronous page read Hardware block protection.
  • WP pin for write protect of the 2 outermost parameter blocks and all main blocks.
  • RP pin for write prote.

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Datasheet Details

Part number M58BW016DB
Manufacturer Numonyx
File Size 0.97 MB
Description 16 Mbit 3V supply Flash memories
Datasheet download datasheet M58BW016DB Datasheet

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Full PDF Text Transcription

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M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.
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