M58BW016DB Datasheet | Numonyx

Features Supply voltage - VDD = 2.7 V to 3.6 V for program, erase and read - VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers - VPP = 12 V for fast program (optional) High performance - Access times: 70, 80 ns - 56 MHz effective zero wait-state burst read - Synchronous burst read - Asynchronous page read Hardware block protection - WP pin for write protect of the 2 outermost parameter blocks and all main blocks - RP pin for write protect of all blocks Optimized for FDI drivers - Fast program / erase suspend latency time < 6 µs - mon Flash interface Memory blocks - 8 parameters blocks (top or bottom) - 31 main blocks Low power consumption - 5 µA typical deep power-down - 60 µA typical standby for M58BW016DT/B 150 µA typical standby for M58BW016FT/B - Automatic standby after asynchronous read Electronic signature - Manufacturer code:...