OSP12N60C Datasheet 600V N-Channel MOSFET

Manufacturer: OCENME

Overview: TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET.

OSP12N60C 600v n-channel mosfet by OCENME - Datasheet Preview

Datasheet Details

Part number	OSP12N60C
Manufacturer	OCENME
File Size	286.30 KB
Description	600V N-Channel MOSFET
Download	OSP12N60C Download (PDF)

General Description

This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V.
Low gate charge ( typical 52nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-So.

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