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OSP12N60C Datasheet Preview

OSP12N60C Datasheet

600V N-Channel MOSFET

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OSP12N60C pdf
TOSSPP1122NN6600MC / TOSSFF1122NN6600MC
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using oTcrueensmeem‘si‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 12.0A, 600V, RDS(on) = 0.650@VGS = 10 V
• Low gate charge ( typical 52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
◀▲
{G
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
OTSSPP1122NN6600MC TOSSFF1122NN6600MC
600
12.0 12.0*
7.4 7.4*
48 48 *
± 30
865
23.1
4.5
231 54
1.85 0.43
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
OSP12N60C
0.54
0.5
62.5
OSF12N60C
2.33
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W



OCENME
OCENME

OSP12N60C Datasheet Preview

OSP12N60C Datasheet

600V N-Channel MOSFET

No Preview Available !

OSP12N60C pdf
OSP12N60C / OSF12N60C
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.0A
2.0 --
-- 0.53
--
--
1
10
100
-100
4.0
0.65
V
V/°C
µA
µA
nA
nA
V
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1850
-- 180
-- 20
--
--
--
pF
pF
pF
VDD = 300 V, ID = 12.0A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 12.0A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
30
90
140
90
52
8.5
20.0
--
--
--
--
-
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.0 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11.0mH, IAS = 12.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.0 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 12.0
-- 48.0
-- 1.4
430 --
5.0 --
A
A
V
ns
µC


Part Number OSP12N60C
Description 600V N-Channel MOSFET
Maker OCENME
Total Page 7 Pages
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