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OSP12N60C Datasheet - OCENME

600V N-Channel MOSFET

OSP12N60C Features

* 12.0A, 600V, RDS(on) = 0.650Ω @VGS = 10 V

* Low gate charge ( typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings T

OSP12N60C General Description

This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These d.

OSP12N60C Datasheet (286.30 KB)

Preview of OSP12N60C PDF

Datasheet Details

Part number:

OSP12N60C

Manufacturer:

OCENME

File Size:

286.30 KB

Description:

600v n-channel mosfet.

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OSP12N60C 600V N-Channel MOSFET OCENME

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