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MSM54V24616 - SDRAM

General Description

The MSM54V24616 is a 131,072-word 16-bit

2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology.

The device operates at 3.3 V.

The inputs and outputs are LVTTL compatible.

Key Features

  • 131,072-words.
  • 16-bit.
  • 2 banks configuration.
  • Single 3.3 V± 10% power supply.
  • LVTTL compatible inputs and outputs www. DataSheet4U. com.
  • All input signals are latched at rising edge of system clock.
  • Auto precharge and controlled precharge.
  • Internal pipelined operation: column address can be changed every clock cycle.
  • Dual internal banks controlled by A9 (Bank Address: BA).
  • Independent byte operation via DQML and DQM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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in im el Pr ¡ Semiconductor MSM54V24616 ¡ Semiconductor 131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM MSM54V24616 y ar DESCRIPTION The MSM54V24616 is a 131,072-word ¥ 16-bit ¥ 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. This device can operate up to 125MHz by using synchronous interface. FEATURES • 131,072-words ¥ 16-bit ¥ 2 banks configuration • Single 3.3 V± 10% power supply • LVTTL compatible inputs and outputs www.DataSheet4U.