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MSC23CV26457D-XXBS8 - DYNAMIC RAM MODULE

General Description

The MSC23CV26457D-xxBS8 is a 2,097,152-word x 64-bit CMOS dynamic random access memory module which is composed of eight 16Mb(2Mx8) DRAMs in TSOP packages mounted with eight decoupling capacitors.

This is an 144-pin small outline dual in-line memory module.

Key Features

  • 2,097,152-word x 64-bit organization.
  • 144-pin Small Outline Dual In-line Memory Module.
  • Gold tab.
  • Single 3.3V power supply, ±0.3V tolerance.
  • Input : LVTTL compatible.
  • Output : LVTTL compatible, 3-state.
  • Refresh : 2048cycles/32ms.
  • /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability.
  • Fast page mode with EDO, read modify write capability.
  • Multi-bit test mode capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This version: Apr. 8. 1999 Semiconductor MSC23CV26457D-xxBS8 2,097,152-word x 64-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23CV26457D-xxBS8 is a 2,097,152-word x 64-bit CMOS dynamic random access memory module which is composed of eight 16Mb(2Mx8) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 144-pin small outline dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required. FEATURES · 2,097,152-word x 64-bit organization · 144-pin Small Outline Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.