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MSC23CV43257D-XXBS8 - DYNAMIC RAM MODULE

General Description

The MSC23CV43257D-xxBS8 is a fully decoded, 4,194,304-word x 32-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in TSOP packages mounted with eight decoupling capacitors on a 72-pin glass epoxy small outline package.

Key Features

  • 4,194,304-word x 32-bit organization.
  • 72-pin Small Outline Dual In-line Memory module MSC23CV43257D-xxBS8 : Gold tab.
  • Single +3.3V supply ± 0.3V tolerance.
  • Input : LVTTL compatible.
  • Output : LVTTL compatible, 3-state.
  • Refresh : 2048cycles/32ms.
  • /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability.
  • Fast page mode with EDO capability.
  • Multi-bit test mode capability.
  • 11/11 Addressing (Row/Column).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This version: Mar. 1999 Semiconductor MSC23CV43257D-xxBS8 4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23CV43257D-xxBS8 is a fully decoded, 4,194,304-word x 32-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs (4Mx4) in TSOP packages mounted with eight decoupling capacitors on a 72-pin glass epoxy small outline package. This module supports any application where high density and large capacity of storage memory are required. FEATURES · 4,194,304-word x 32-bit organization · 72-pin Small Outline Dual In-line Memory module MSC23CV43257D-xxBS8 : Gold tab · Single +3.3V supply ± 0.