MSM511000C Datasheet | OKI Electric

DESCRIPTION The MSM511000C/CL is a 1,048,576-word - 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM511000C/CL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer metal CMOS process. The MSM511000C/CL is available in a 26/20-pin plastic SOJ or 20-pin plastic ZIP. The MSM511000CL (the low-power version) is specially designed for lowerpower applications. FEATURES - 1,048,576-word - 1-bit configuration - Single 5 V power supply, ± 10% tolerance - Input : TTL patible, low input capacitance - Output : TTL patible, 3-state - Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version) - Fast page mode, read modify write capability - CAS before RAS refresh, hidden refresh, RAS-only refresh capability - Package options: 26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM511000C/CL-xx JS) 20-pin 400 mil plastic ZIP (ZIP20-P-400-1.27) (Product : MSM511000C/CL-xx ZS) xx indicates speed rank. PRODUCT FAMILY Family MSM511000C/CL-45 MSM511000C/CL-50 MSM511000C/CL-60 MSM511000C/CL-70 Access Time (Max.) t RAC 45 ns 50 ns 60 ns 70 ns t AA 24 ns 26 ns 30 ns 35 ns t CAC 14 ns 14 ns 15 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 100 ns 120 ns 130 ns 468 m W 440 m W 385 m W 330 m W 5.5 m W/ 1.1 m W (L-version) 1/15 ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) DIN 1 WE 2 RAS 3 NC 4 NC 5 A0 9 A1 10 A2 11 A3 12 VCC 13 , 26 VSS 25 DOUT 24 CAS 23 NC 22 A9 18 A8 17 A7 16 A6 15 A5 14 A4 Pin Name A0 - A9 RAS CAS DIN DOUT WE VCC VSS NC MSM511000C/CL A9 1 DOUT 3 DIN 5 RAS 7 NC 9 A0 11 A2 13 VCC 15 A5 17 A7 19 2 CAS 4 VSS 6 WE 8 NC NO LEAD 12 A1 14 A3 16 A4 18 A6 20 A8 26/20-Pin Plastic SOJ 20-Pin Plastic ZIP Function Address Input Row Address Strobe Column Address Strobe Data Input Data Output Write Enable Power Supply (5 V) Ground (0 V) No Connection 2/15 ¡ Semiconductor MSM511000C/CL BLOCK DIAGRAM RAS...